| 马瑞芬,于洪涛,吴帅,陈硕.SnO2-Si光电极制备及其降解污染物性能[J].,2019,59(1):14-19 |
| SnO2-Si光电极制备及其降解污染物性能 |
| Fabrication of SnO2-Si photoelectrode and its performance in degradation of pollutants |
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| DOI：10.7511/dllgxb201901003 |
| 中文关键词: 光电催化 SnO2 Si 保护层 |
| 英文关键词: photoelectrocatalysis SnO2 Si protection layer |
| 基金项目:国家自然科学基金资助项目(21377020). |
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| 中文摘要: |
| 通过化学气相沉积法，在清洁的n型Si表面制备SnO2薄膜作为保护层，得到SnO2-Si光电极．采用TEM、SEM、XRD、XPS、DRS等对其进行表征，研究了其在模拟太阳光下光催化降解苯酚的性能．在不同沉积温度下得到的样品中，400 ℃沉积得到的样品结晶度相对最高．SnO2层厚度为230 nm时SnO2-Si光电极光电流响应最强，且分解水起始电位较正，用于降解污染物时可避免分解水副反应的发生．在中性、酸性、碱性电解质溶液中，其循环伏安曲线衰减均不明显，证明SnO2-Si光电极具有稳定的光电化学性能．在可见光光电催化条件下，偏压为1.8 V时，其苯酚的去除率达到100%，TOC去除率达到21%． |
| 英文摘要: |
| SnO2-Si photoelectrode is fabricated by depositing SnO2 film as a protection layer on clean surface of n-Si via chemical vapour deposition. Its properties are characterized by TEM, SEM, XRD, XPS and DRS, and its performance in photocatalytic degradation of phenol is also studied under simulated sunlight. Among samples fabricated under various deposition temperature, one deposited under 400 ℃ shows the best crystalline. The highest photocurrent response and the most positive onset potential for water splitting are obtained when SnO2 layer is 230 nm. Those are advantageous for inhibiting water splitting in degradation of pollutants. The cyclic voltammetry curves tested in neutral, acidic and basic electrolyte keep stable, which indicates the good photoelectrochemical properties of SnO2-Si photoelectrode. Under the photoelectrocatalysis of visible light and 1.8 V bias potential, the removal efficiencies of phenol and TOC are respectively 100% and 21%. |
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