| 吴东江,马广义,张强,郭东明.长脉宽激光硅片弯曲成形温度机制研究[J].,2009,(4):531-535 |
| 长脉宽激光硅片弯曲成形温度机制研究 |
| Study of temperature mechanism of silicon bent using long pulse laser |
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| DOI：10.7511/dllgxb200904011 |
| 中文关键词: 激光弯曲 预热作用 温度梯度机制 翘曲机制 |
| 英文关键词: laser bending pre-heated temperature gradient mechanism (TGM) buckling mechanism (BM) |
| 基金项目:教育部博士学科点专项科研基金资助项目(20070141002)；辽宁省自然科学基金资助项目(20062178). |
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| 中文摘要: |
| 根据已开展的长脉冲激光弯曲硅片试验，利用Ansys仿真软件计算了硅片弯曲过程中温度场的分布形式，分析了长脉冲激光弯曲硅片的温度特点．计算结果表明，试验所用硅片在弯曲过程中存在较明显的温度振荡，同时在第一次扫描后半段出现脆性-塑性温度转变点，认为第1次扫描主要起预热硅片的作用，与试验过程中第1次扫描无明显弯曲现象相符．在随后的扫描过程中，根据上下表面温度差以及光斑直径与厚度的比例关系，说明弯曲现象的产生是温度梯度机制 TGM 和翘曲机制 BM 共同作用的结果，同时在分别对每次扫描前初始温度和扫描过程中最高温度的分析中发现，随着扫描次数的增加，温度逐渐上升，但增加量逐渐减小，最终几乎趋于不变． |
| 英文摘要: |
| According to the experiment of laser bending silicon with long pulse width, the temperature distribution characteristics of silicon during process of laser bending is analyzed by Ansys software. The calculated results indicate that the steep temperature fluctuation in one point exists during process of scanning, meanwhile in the later half-period of first scanning, brittle-ductile temperature transforming point appears, so the first scanning is considered as the pre-heated silicon, that is in line with the phenomena of experiment. In the later process of scanning, TGM (temperature gradient mechanism) and BM (buckling mechanism) are proved to be in existence according to the different temperatures between top and bottom surfaces, and the proportional relationship of spot diameter and thickness as well as the temperature increment is less as the increase of scanning times through the analysis for initial and maximum temperature, and finally the temperature distribution is hardly changing. |
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