| 周徐洋,吴爱民,马艳萍,董闯.磁控溅射工艺中靶材溅射功率对BCMg薄膜性能影响[J].,2014,54(3):298-302 |
| 磁控溅射工艺中靶材溅射功率对BCMg薄膜性能影响 |
| Influence of sputtering power on properties of BCMg thin films prepared by magnetron sputtering |
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| DOI：10.7511/dllgxb201403006 |
| 中文关键词: BCMg 磁控溅射 非晶 力学性能 |
| 英文关键词: BCMg magnetron sputtering amorphous mechanical property |
| 基金项目:国家自然科学基金资助项目(51131002)；教育部高等学校科技创新工程重大项目培育资金资助项目(707015)；中央高校基本科研业务费专项资金资助项目(DUT13JN08). |
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| 中文摘要: |
| 采用多靶磁控共溅射技术，利用高纯B、C及Mg单质靶材为溅射源，573 K下在单晶Si(001)表面成功制备硬质非晶态BCMg薄膜．背散射扫描电镜(SEM)图显示薄膜成分均匀，与基体Si片结合良好．X射线光电子能谱(XPS)分析表明薄膜中存在B—B、B—C、C—Mg等键态．X射线衍射仪(XRD)及高分辨透射电镜(HRTEM)测试结果表明薄膜为非晶态结构．某单质靶材溅射功率提高时，沉积速率及相应元素在薄膜中的含量随之上升．随着薄膜中B含量增加，薄膜中B—B共价键数量增多，BCMg薄膜硬度与断裂韧性均上升．B含量为85%时，BCMg薄膜硬度及断裂韧性分别达到33.9 GPa及3 MPa·m 1/2 ． |
| 英文摘要: |
| Hard amorphous BCMg thin films were successfully deposited on the surface of Si(001) via multi-target magnetron co-sputtering technique at 573 K. High-purity B C and Mg elemental disks were used as sputtering targets. Back scattering SEM image illustrates that deposited BCMg coating has a uniform component distribution and a well-adherence with Si substrate. XPS results reveal the existence of B—B B—C and C—Mg bonds. XRD and HRTEM results show that the deposited films are in amorphous structure. With the augment of target power the corresponding elemental content and the overall deposition rate are enlarged. As B content is raised leading to the increase of covalent B—B bonds both the hardness and fracture toughness of BCMg thin films increase. Especially when the B content reaches 85% the hardness and fracture toughness of BCMg thin film are respectively 33.9 GPa and 3 MPa·m 1/2 . |
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