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InSb薄膜热导率的温度特性及传热机理 |
Temperature dependent thermal conductivity of InSb thin film and heat transfer mechanism |
投稿时间:2018-01-02 修订日期:2018-03-06 |
DOI: |
中文关键词: InSb薄膜 晶态和非晶态 热导率 温度特性 |
英文关键词: InSb thin film Crystalline and amorphous Thermal conductivity Temperature |
基金项目:国家自然科学基金项目(面上项目,重点项目,重大项目) |
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中文摘要: |
InSb薄膜广泛应用于高精度的光电存储、红外探测和红外热成像技术以及超分辨掩膜层技术中。热导率以及其温度特性是影响薄膜实际应用的关键因素。目前对于InSb薄膜热导率温度特性的研究却鲜有报道。本文采用瞬态热反射方法测试了厚度为70-200nm的InSb薄膜在非晶态和晶态下热导率及其温度特性,并探讨了其中的热输运机理。对于晶态薄膜,热导率为0.55±0.055 W/mK,并且随温度的变化不明显;而非晶态的InSb薄膜在温度450K以下时热导率为0.37±0.037 W/mK,当温度在450K之上时,由于薄膜从非晶态转化为晶态,其热导率经历了一个突然的升高过程。无论是晶态还是非晶态的薄膜样品,热导率与薄膜厚度没有明显的依赖关系。本文的结果可以为InSb薄膜的实际应用提供有益的参考。 |
英文摘要: |
The InSb thin film is widely used in high precision photoelectric storage, infrared detection and infrared thermal imaging technology and super resolution layer mask technology. Thermal conductivity and its temperature dependent characteristic are the key factors for the influence of the film application. However, at present, the temperature dependent thermal conductivity of InSb thin film is rarely reported. This article tested the temperature dependent thermal conductivity of the InSb thin film under the amorphous and crystalline which thickness is 70-200nm based on the transient thermal reflection method. And the heat transport mechanism is discussed. For crystalline InSb thin film, its thermal conductivity is 0.55±0.055 W/mK from experiment, and the value is hardly changed with the change of temperature; and for the amorphous InSb film, its thermal conductivity is 0.37±0.037 W/mK when the temperature is below 450K. While when the temperature is above 450 k, due to the changes from amorphous into crystalline, the thermal conductivity has experienced a sudden rise. Neither crystalline nor amorphous thin film samples, their thermal conductivity changed with the change of the sample thickness. This work can provide a beneficial reference for the practical application of InSb thin film. |
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