文章摘要
SnO2-Si光电极的制备及其降解污染物性能的研究
Preparation of SnO2-Si photoelectrode for degradation of pollutant in the wastewater.
投稿时间:2018-03-19  修订日期:2018-05-03
DOI:
中文关键词: 光电催化  SnO2  Si  保护层
英文关键词: photochemical catalysis  SnO2  Si  protective layers
基金项目:国家自然科学基金项目(面上项目,重点项目,重大项目)
作者单位E-mail
马瑞芬 大连理工大学环境学院 mrf0302@mail.dlut.edu.cn 
于洪涛 大连理工大学环境学院 yuhongtao@dlut.edu.cn 
吴帅 大连理工大学环境学院  
陈硕 大连理工大学环境学院  
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中文摘要:
      通过化学气相沉积法,在清洁的n型Si表面制备SnO2薄膜作为保护层,得到SnO2-Si光电极。主要采用XRD、TEM、SEM、XPS、DRS等对其进行表征,研究了其在模拟太阳光下光催化降解苯酚的性能。分析结果显示在不同温度条件下得到的样品中,400℃沉积得到的样品结晶度相对较高。当薄膜厚度为230 nm时,SnO2-Si光电极的光电流响应最强,且分解水起始电位较正,用于降解有机物时可避免分解水副反应的发生。在中性、酸性、碱性电解质溶液中,其循环伏安曲线衰减均不明显,证明SnO2-Si光电极具有稳定的光电化学性能。在可见光光电催化条件下,偏压为1.8V时,SnO2-Si对苯酚的去除率达到了100%,矿化率达到21%。SnO2相比其他半导体氧化物保护层具有化学稳定性强、光学透明高、分解水过电势高等优点。
英文摘要:
      SnO2 is designed as a protention layer as n-Si, and SnO2-Si photoelectrode is fabricated via a chemical vapour deposition process. The SnO2-Si photoelectrode is characterized by XRD、TEM、SEM、XPS and DRS respectively, and the phenol degradation in photoelectrocatalytic processes under simulated sunlight is studied. Analysis results show that sample deposited under 400 ℃ possesses a relatively high crystallinity compared with samples deposited under other temperature conditions. The SnO2-Si photoelectrode has the biggest photoresponse when the film thickness is 230 nm, and the onset potential for water oxidation is very positive which can prevent water splitting when used for degradation of pollutant. The cyclic voltammetry (CV) curves tested in neutral, acidic and alkaline electrolyte solutions decrease not obviously, which prove that the SnO2-Si photoelectrode has stable photochemical properties. The phenol degradation efficiency of SnO2-Si photoelectrode under visible light, with 1.8V bias potential, is up to 100%, and the TOC removal is 21%. SnO2 has the advantages such as strong chemical stability, high optical transparency and positive onset potential for water oxidation compared with other semiconductor oxide protective layers.
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