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| Ti/Al比例及不同退火温度对AlGaN/GaN HEMT欧姆接触的影响 |
| Effect of Ti/Al Ratio and different annealing temperatures on ohmic contact of AlGaN/GaN HEMT |
| 投稿时间：2019-08-16 修订日期：2019-11-25 |
| DOI： |
| 中文关键词: 高电子迁移率晶体管 欧姆接触 退火 比接触电阻率 |
| 英文关键词: High electron mobility transistor Ohmic contact Annealing |
| 基金项目:支持：面向空间应用的SiC基PIN型软X射线探测器研究(国家自然科学,项目编号：ZX0180421)；耐高压硅基氧化镓场效应晶体管的研制(大连市科技计划,项目编号：ZX20180681)；耐辐照室温氮化镓一维位置灵敏带电粒子探测系统的研制(国家自然科学,项目编号：ZX20160406)； |
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| 中文摘要: |
| 本文利用热蒸发方法制备了Ti/Al金属双层结构的AlGaN/GaN HEMT欧姆接触,Ti/Al比例分别为20:100和20:40。采用相同退火时间、不同退火温度对不同的Ti/Al比的AlGaN/GaN HEMT结构进行退火。 通过XRD对电极结构的合金成分进行了分析,利用金相显微镜观察了电极的表面形貌。实验结果显示,相同的退火时间条件下,退火温度在800℃,Ti/Al比为20/100的AlGaN/GaN HEMT结构形成了较好的欧姆接触；Ti/Al比为20：40的接触电极,接触电阻大,表面形态光滑；Ti比例过高会直接影响TiN的形成导致比接触电阻率增加,但能明显改善表面形态。 |
| 英文摘要: |
| In this paper, the AlGaN/GaN HEMT ohmic contact of Ti/Al bilayer structure was prepared by thermal evaporation method, and the Ti/Al ratios are 20:100 and 20:40, respectively. The AlGaN/GaN HEMT structures with different Ti/Al ratios were annealed using the same annealing time and different annealing temperatures. The alloy composition of the electrode structure was analyzed by XRD, and the surface morphology of the electrode was observed by metallographic microscope. The experimental results showed that under the same annealing time, the annealing temperature is 800 °C, and the AlGaN HEMT structure with Ti/Al ratio of 20/100 forms a good ohmic contact; The contact resistance of the contact electrode with Ti/Al ratio of 20:40 is large and the surface morphology is smooth; the high Ti ratio which directly affects the formation of TiN, resulting in an increase in specific resistivity, but can significantly improve the surface morphology. |
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